| Make: |
Physical Eelctronics, USA |
| Model: |
Trift V nano TOF |
Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) is a technique in which an ion beam (primary ion) is irradiated on a solid sample and mass separation of the ions emitted from the surface (secondary ions) is performed using the difference in time-of-flight (time-of-flight is proportional to the square root of the weight).
TOF-SIMS can obtain information regarding elements or molecular species within 1 nm of the sample surface at a very high detection sensitivity.
 Mass spectrum study for elemental and organic composition
Elemental and organic species mapping
Dopant and impurity depth profiling
Elemental 3D reconstruction for profile study
Composition and impurity measurements of thin films (metals, dielectrics, SiGe)
High-precision matching of process tools such as ion implanters
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Nanodevices
Polymer blends
Pharmaceuticals
Thin films/surface coatings
corrosion
Catalysis
Geologic materials
Glass industries
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